ProjectsPricingInsights

G080N10T AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G080N10T product

G080N10T

MOSFETs - Single

N-ChannelMOSFET100VPower

The G080N10T is a high-current 100V N-Channel MOSFET designed for efficient power switching and DC/DC conversion.

Best for

  • DC/DC converters
  • High-current power switching

Avoid if

  • Applications requiring low-voltage logic level drive without sufficient gate voltage

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
100V
ID
180A
RDS(on)
7.5mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

0a152a6e7584b8d6347c0e36f929810f_2307191059_GOFORD-G080N10T_C7465414.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G080N10T: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET utilizing advanced trench technology, rated for 100V and 180A.