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G08N06S AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G08N06S product

G08N06S

MOSFETs - Single

MOSFETN-Channel60VSOP-8

The G08N06S is a 60V, 5A N-Channel MOSFET in an SOP-8 package, optimized for power switching and DC/DC conversion using trench technology.

Best for

  • DC/DC converters
  • General power switching

Avoid if

  • Applications requiring currents significantly higher than 5A
  • High-temperature environments exceeding 150°C

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage compatibility

Key specifications

VDS
60 V
ID
5 A
RDS(ON)
< 30 mΩ
Package
SOP-8

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power switchDC/DC converters

Datasheet

e9b039324e7b4460c6cc56d63119b545_2212231008_GOFORD-G08N06S_C840064.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G08N06S: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The G08N06S is an N-Channel Enhancement Mode Power MOSFET from Goford Semiconductor, designed for high-efficiency power applications.