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G08P06D3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G08P06D3 product

G08P06D3

MOSFETs - Single

P-ChannelMOSFETTrench60V

The G08P06D3 is a -60V, -8A P-Channel Trench MOSFET in a DFN3x3-8L package, optimized for power switching and DC/DC conversion.

Best for

  • DC/DC converters
  • Power switching circuits

Avoid if

  • Applications requiring higher current or voltage ratings

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
-60 V
ID
-8 A
RDS(on)
52 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
Vendor Undefined
MSL
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power ManagementIndustrial Control

Datasheet

d66a68f4f5fd11168ba93059f96bad2e_2212230930_GOFORD-G08P06D3_C5162371.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G08P06D3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel Trench MOSFET from Goford Semiconductor, designed for high-efficiency power switching.