ProjectsPricingInsights

G09P02L AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G09P02L product

G09P02L

MOSFETs - Single

P-ChannelMOSFETTrench Technology

The G09P02L is a P-Channel enhancement mode power MOSFET in a SOT-23-3L package, optimized for power switching and DC/DC conversion with low RDS(ON).

Best for

  • DC/DC converters
  • General power switching

Avoid if

  • High-voltage applications exceeding -20V
  • Applications requiring currents significantly above -9A

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage compatibility

Key specifications

VDS
-20 V
ID
-9 A
RDS(on)
< 23 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power ManagementDC/DC Converters

Datasheet

760e600527d6977592210793b16e949a_2206281845_GOFORD-G09P02L_C3151763.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G09P02L: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The G09P02L is a P-Channel enhancement mode power MOSFET from Goford Semiconductor, designed using advanced trench technology for efficient power switching.