G1006LE AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G1006LE product

G1006LE

MOSFETs - Single

MOSFETN-Channel100V

The G1006LE is a 100V, 3A N-Channel Trench MOSFET in an SOT-23-3L package, suitable for compact power switching and DC/DC conversion applications.

Best for

  • DC/DC converters
  • General power switching

Avoid if

  • High-current applications exceeding 3A continuous current

Check before use

  • Thermal dissipation requirements in the SOT-23-3L package

Key specifications

VDS
100 V
ID
3 A
RDS(on)
150 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power

CAD Models

Download ECAD models for G1006LE: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The G1006LE is an N-Channel Trench MOSFET from Goford Semiconductor, optimized for low gate charge and low on-resistance.