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G110N06K AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G110N06K product

G110N06K

MOSFETs - Single

MOSFETN-Channel60V110A

The G110N06K is a high-performance 60V, 110A N-channel MOSFET in a TO-252 package, optimized for high-current switching and power management.

Best for

  • PWM circuits
  • Load switching
  • Uninterruptible power supplies

Avoid if

  • Applications requiring extremely low gate charge
  • Space-constrained designs where TO-252 is too large

Check before use

  • Thermal design
  • Gate drive capability

Key specifications

VDS
60 V
ID
110 A
RDS(ON)
5.5 mΩ
PD
160 W

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

f00fc7f9d9508f43a907149a42f112a5_2212231008_GOFORD-G110N06K_C840052.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G110N06K: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The G110N06K is an N-channel power MOSFET from Goford Semiconductor, designed for high-current switching applications like PWM and UPS.