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G110N06T AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G110N06T product

G110N06T

MOSFETs - Single

MOSFETN-Channel60VTO-220

The G110N06T is a 60V, 110A N-Channel Power MOSFET in a TO-220 package, designed for high-efficiency power switching and DC/DC conversion applications.

Best for

  • DC/DC converters
  • Power switching

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
60 V
ID
110 A
RDS(on)
6.4 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
nan
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power Management

Datasheet

a2fba89e85cb3047c293392b64e1431c_products-detail.php.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G110N06T: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET utilizing advanced trench technology for low RDS(ON) and low gate charge.