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G115P06M AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G115P06M product

G115P06M

MOSFETs - Single

MOSFETP-ChannelPower

The G115P06M is a P-Channel enhancement mode power MOSFET designed for high-current switching and DC/DC converter applications.

Best for

  • Power switching
  • DC/DC converters

Avoid if

  • Applications requiring N-Channel logic or extremely low-power, small-signal switching.

Check before use

  • Thermal dissipation requirements and gate drive voltage levels.

Key specifications

VDS
-60 V
ID
-98 A
RDS(on)
< 11.5 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementDC/DC Converters

Datasheet

9bde6a33e7476e52f9c81db377ddd198_2307191059_GOFORD-G115P06M_C7465411.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G115P06M: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel power MOSFET using advanced trench technology, optimized for low RDS(on) and low gate charge.