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G115P06T AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G115P06T product

G115P06T

MOSFETs - Single

MOSFETP-ChannelPower

The G115P06T is a high-current P-Channel power MOSFET designed for power switching and DC/DC conversion applications.

Best for

  • DC/DC converters
  • Power switching

Avoid if

  • Low-power, space-constrained applications

Check before use

  • Gate drive voltage levels
  • Thermal design

Key specifications

VDS
-60 V
ID
-98 A
RDS(on)
9.3 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

a1eb57873f2c1316cc134daaf57b0c7a_2307191059_GOFORD-G115P06T_C7465410.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G115P06T: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode power MOSFET utilizing advanced trench technology.