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G120P03S2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G120P03S2 product

G120P03S2

FETs

MOSFETP-ChannelDual

The G120P03S2 is a dual P-channel MOSFET in an SOP-8 package, designed for power management and switching applications.

Best for

  • DC-DC converters
  • Load switching

Avoid if

  • High-power applications exceeding 1.4W dissipation

Check before use

  • Thermal resistance (RthJA = 90°C/W)

Key specifications

VDS
-30V
ID
-16A
RDS(on)
< 14mΩ

Compliance & Environment

RoHS
RoHS non-compliant
REACH
Vendor Undefined
MSL
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0000

Application

Power Management

Datasheet

09b363f298a0a3aeb82835e6b8fbeddb_2209151800_GOFORD-G120P03S2_C5162379.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G120P03S2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual P-channel enhancement mode power MOSFET using advanced trench technology.