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G12P10KE AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G12P10KE product

G12P10KE

MOSFETs - Single

MOSFETP-ChannelPower

The G12P10KE is a -100V, -12A P-Channel MOSFET in a TO-252 package, optimized for power switching and DC/DC conversion.

Best for

  • Power switching
  • DC/DC converters

Avoid if

  • Applications requiring higher current or lower RDS(ON)

Check before use

  • Thermal design and gate drive compatibility

Key specifications

VDS
-100 V
ID
-12 A
RDS(ON)
<200 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
nan
ECCN
EAR99
HTSUS
nan

Application

Power Management

Datasheet

ca80fb025925582d213e62e5d85a9393_2307191059_GOFORD-G12P10KE_C7465396.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G12P10KE: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode power MOSFET using advanced trench technology.