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G16P03D3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G16P03D3 product

G16P03D3

MOSFETs - Single

MOSFETP-ChannelTrenchPower

The G16P03D3 is a P-Channel Trench MOSFET designed for efficient power switching and DC/DC conversion, offering low on-resistance and high current handling in a compact DFN3X3-8L package.

Best for

  • DC/DC converters
  • Power switching

Avoid if

  • Applications requiring higher than -30V VDS or higher than -16A continuous current.

Check before use

  • Thermal design and gate drive voltage levels.

Key specifications

VDS
-30 V
ID
-16 A
RDS(ON)
< 12 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power Management

Datasheet

2b4d519cf82f2deb24568ba417a58daf_2202132000_GOFORD-G16P03D3_C2840767.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G16P03D3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The G16P03D3 is a P-Channel Trench MOSFET from Goford Semiconductor, optimized for low RDS(ON) and efficient switching in power management circuits.