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G16P03S-B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G16P03S-B product

G16P03S-B

MOSFETs - Single

P-ChannelMOSFETSOP-8Power

The G16P03S-B is a P-Channel Trench MOSFET designed for power management, offering -30V VDS and -16A ID in a standard SOP-8 package.

Best for

  • DC/DC converters
  • Power switching

Avoid if

  • Applications requiring higher than -30V VDS
  • High-current applications exceeding -16A

Check before use

  • Thermal design
  • Gate drive voltage levels

Key specifications

VDS
-30 V
ID
-16 A
RDS(on)
< 15 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementDC/DC Converters

Datasheet

971d7d2f5dde01a349dac94f08ff8c91_2403181120_GOFORD-G16P03S-B_C22362829.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G16P03S-B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel Trench MOSFET from GOFORD, optimized for low RDS(ON) and low gate charge, suitable for power switching and DC/DC conversion.