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G170P06M AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G170P06M product

G170P06M

MOSFETs - Single

P-ChannelMOSFET60VTO-263

The G170P06M is a high-performance -60V P-Channel MOSFET designed for robust power switching and DC/DC conversion.

Best for

  • Power switching
  • DC/DC converters

Avoid if

  • Applications requiring N-Channel logic or voltages exceeding -60V.

Check before use

  • Thermal dissipation requirements and gate drive voltage levels.

Key specifications

VDS
-60 V
ID
-65 A
RDS(on)
< 17 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

c47f585c15d49204773bb1fa08e20ec9_2312160131_GOFORD-G170P06M_C19673811.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G170P06M: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode power MOSFET utilizing advanced trench technology, optimized for low gate charge and low on-resistance.