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G170P06S AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G170P06S product

G170P06S

MOSFETs - Single

P-ChannelMOSFETSOP-8Power Switch

The G170P06S is a -60V, -12A P-Channel MOSFET in an SOP-8 package, designed for power switching and DC/DC conversion.

Best for

  • Power switching
  • DC/DC converters

Avoid if

  • Applications requiring higher than 12A continuous current
  • High-temperature environments exceeding 150°C

Check before use

  • Gate drive requirements
  • Thermal dissipation capacity of the PCB

Key specifications

VDS
-60 V
ID
-12 A
RDS(on)
< 17 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

acef01ea754ede21c384ad524c0153ad_2312160131_GOFORD-G170P06S_C19673805.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G170P06S: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The G170P06S is a P-Channel enhancement mode power MOSFET manufactured by Goford Semiconductor, utilizing advanced trench technology.