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G1K1P06HH AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G1K1P06HH product

G1K1P06HH

FETs

MOSFETP-ChannelSOT-223

The G1K1P06HH is a -60V, -4.5A P-Channel MOSFET from Goford Semiconductor, designed for power switching and DC/DC conversion in an SOT-223 package.

Best for

  • Power switching
  • DC/DC converters

Avoid if

  • Applications requiring higher current or lower RDS(ON) than specified.

Check before use

  • Thermal dissipation requirements in your PCB layout.

Key specifications

VDS
-60 V
ID
-4.5 A
RDS(ON)
< 110 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
REACH Unaffected
MSL
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power Management

Datasheet

d287c460b50dfef49c957c0863b259b6_2307191058_GOFORD-G1K1P06HH_C7465327.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G1K1P06HH: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode power MOSFET utilizing advanced trench technology.