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G1K8P06S2 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G1K8P06S2 product

G1K8P06S2

FETs

MOSFETP-ChannelDualSOP-8

The G1K8P06S2 is a dual P-channel MOSFET in an SOP-8 package, designed for -60V, -3.2A power switching and DC/DC conversion.

Best for

  • DC/DC converters
  • Power switching

Avoid if

  • Applications requiring high current beyond -3.2A

Check before use

  • Thermal design
  • Gate drive voltage

Key specifications

VDS
-60V
ID
-3.2A
RDS(on)
<170mΩ

Compliance & Environment

RoHS
RoHS non-compliant
REACH
Vendor Undefined
MSL
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0000

Application

Power Management

Datasheet

2783fbbeb9b5caae5dc7a444c8a960a2_products-detail.php.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G1K8P06S2: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual P-channel enhancement mode power MOSFET using advanced trench technology, optimized for low RDS(on) and low gate charge.