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G1NP02LLE AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G1NP02LLE product

G1NP02LLE

FETs

MOSFETDual ChannelTrench Technology

The G1NP02LLE is a dual N and P-channel enhancement mode MOSFET array designed for compact power switching and DC/DC conversion applications.

Best for

  • DC/DC converters
  • Load switching

Avoid if

  • High-current applications exceeding 1.3A

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
20V / -20V
ID
1.3A / -1.1A
RDS(ON)
210mΩ / 460mΩ
Package
SOT-23-6L

Compliance & Environment

RoHS
RoHS non-compliant
REACH
Vendor Undefined
MSL
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0000

Application

Power ManagementConsumer Electronics

Datasheet

a354ea3b039040b74128c9c9c23058f9_2307191058_GOFORD-G1NP02LLE_C7465318.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G1NP02LLE: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a complementary N and P-channel power MOSFET array utilizing advanced trench technology, housed in a SOT-23-6L surface-mount package.