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G2012 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G2012 product

G2012

MOSFETs - Single

N-ChannelMOSFET20VDFN2x2-6L

The G2012 is a 20V N-Channel MOSFET in a compact DFN2x2-6L package, designed for efficient power switching and DC/DC conversion.

Best for

  • DC/DC converters
  • Low-voltage power switching

Avoid if

  • High-voltage applications exceeding 20V

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage compatibility

Key specifications

VDS
20V
ID
12A
RDS(ON)
<12mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
nan
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power ManagementDC/DC Converters

Datasheet

dcce9888a64cdd9f27cc51264cd29338_7_40_hb-462019.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G2012: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The G2012 is an N-Channel enhancement mode power MOSFET utilizing advanced trench technology for low on-resistance and gate charge.