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G26P04K AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G26P04K product

G26P04K

MOSFETs - Single

P-ChannelMOSFET40VTO-252

The G26P04K is a P-Channel power MOSFET optimized for high-efficiency switching and DC/DC conversion, featuring low RDS(on) and advanced trench technology.

Best for

  • DC/DC converters
  • Power switching

Avoid if

  • Applications requiring N-Channel logic
  • High-frequency switching beyond gate charge limits

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
-40 V
ID
-26 A
RDS(on)
< 18 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

a08d67d117de49b948e5248574686251_2212141409_GOFORD-G26P04K_C5258958.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G26P04K: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The G26P04K is a P-Channel enhancement mode power MOSFET manufactured by Goford Semiconductor, utilizing advanced trench technology for low RDS(on) and low gate charge.