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G2K2P10D3E AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G2K2P10D3E product

G2K2P10D3E

MOSFETs - Single

MOSFETP-Channel100V

The G2K2P10D3E is a -100V, -10A P-Channel MOSFET in a DFN3x3-8L package, suitable for power switching and DC/DC conversion.

Best for

  • DC/DC converters
  • Power switching

Avoid if

  • Applications requiring high-side switching with complex gate drive requirements

Check before use

  • Thermal dissipation capabilities of the PCB layout

Key specifications

VDS
-100V
ID
-10A
RDS(on)
< 210mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

60e1b907a89b6d18c504c21671df3eae_2312160131_GOFORD-G2K2P10D3E_C19673801.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G2K2P10D3E: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode power MOSFET utilizing advanced trench technology.