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G33N03D3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G33N03D3 product

G33N03D3

MOSFETs - Arrays

MOSFETDual N-Channel30V

The G33N03D3 is a dual N-Channel Trench MOSFET designed for high-efficiency power switching and DC/DC conversion.

Best for

  • DC/DC converters
  • Power switching circuits

Avoid if

  • Applications requiring extremely high continuous current beyond 30A

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
30 V
ID
30 A
RDS(ON)
< 13 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power Management

Datasheet

e13457842394062213ed915232fa6164_2212231008_GOFORD-G33N03D3_C840053.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G33N03D3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-Channel Trench MOSFET housed in a compact DFN3.3x3.3-8L package, optimized for low RDS(ON) and efficient switching.