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G350N06D32 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G350N06D32 product

G350N06D32

MOSFETs - Single

MOSFETDual N-Channel60VPower Management

The G350N06D32 is a dual N-channel enhancement mode MOSFET designed for power switching and DC/DC conversion applications, featuring a 60V drain-source voltage and 10A current rating in a compact DFN3X3-8L package.

Best for

  • DC/DC converters
  • Power switching

Avoid if

  • Applications requiring higher current or voltage ratings

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
60 V
ID
10 A
RDS(ON)
35 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

3ae5507cda1473a09052b73a12f51d08_2312160131_GOFORD-G350N06D32_C19673806.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G350N06D32: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode power MOSFET utilizing advanced trench technology, housed in a DFN3X3-8L package.