G450N10D52 Datasheet, Specs, Alternatives & ECAD | Goford Semiconductor | PartGenie

AI summary

G450N10D52 product

The G450N10D52 is a dual N-channel power MOSFET featuring 100V drain-source voltage and 35A continuous current capacity, housed in a compact DFN5x6-8L package.

Best for

DC/DC converters
Power switching

Avoid if

Applications requiring extremely low gate charge or high-frequency switching beyond typical MOSFET capabilities.

Check before use

Thermal resistance (RthJC) and PCB layout for heat dissipation.

Key specifications

VDS: 100 V
ID: 35 A
RDS(ON): 45 mΩ

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power Management

Datasheet

0c79980d19a083d735e0ca274258854f_2307191058_GOFORD-G450N10D52_C7465314.pdf

800 KB

CAD Models

Download ECAD models for G450N10D52: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode power MOSFET utilizing advanced trench technology, suitable for power switching and DC/DC conversion.