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G6K8P15SE AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G6K8P15SE product

G6K8P15SE

MOSFETs - Single

P-ChannelMOSFET150VSOP-8

The G6K8P15SE is a -150V, -6A P-Channel MOSFET in an SOP-8 package, optimized for power switching and DC/DC conversion using trench technology.

Best for

  • DC/DC converters
  • General power switching

Avoid if

  • Applications requiring higher current than 6A
  • High-frequency switching where gate charge (Qg=11nC) is a limiting factor

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage compatibility

Key specifications

VDS
-150 V
ID
-6 A
RDS(on)
< 800 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power switchDC/DC converters

Datasheet

a79a00c44c1dd4559022b57754bcf4a2_2307191058_GOFORD-G6K8P15SE_C7465320.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G6K8P15SE: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The G6K8P15SE is a P-Channel enhancement mode power MOSFET from GOFORD, designed for high-efficiency power switching and DC/DC converter applications.