G6N02L AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G6N02L product

G6N02L

MOSFETs - Single

N-ChannelMOSFETTrench Technology20V

The G6N02L is a 20V, 6A N-Channel Trench MOSFET housed in an SOT-23-3L package, optimized for low RDS(on) and efficient power switching.

Best for

  • DC/DC converters
  • General power switching

Avoid if

  • Applications requiring >20V drain-source voltage
  • High-current applications exceeding 6A continuous

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage compatibility

Key specifications

VDS
20 V
ID
6 A
RDS(on)
< 11.3 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

CAD Models

Download ECAD models for G6N02L: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The G6N02L is an N-Channel Trench MOSFET from Goford Semiconductor, designed for high-efficiency power switching and DC/DC conversion.