G7K2N20HE Datasheet, Specs, Alternatives & ECAD | Goford Semiconductor | PartGenie

AI summary

G7K2N20HE product

The G7K2N20HE is a 200V, 2A N-Channel MOSFET in an SOT-223 package, utilizing advanced trench technology for efficient power switching and DC/DC conversion.

Best for

DC/DC converters
General power switching

Avoid if

High-current applications exceeding 2A
Applications requiring extremely low RDS(on)

Check before use

Thermal dissipation requirements
Gate drive voltage levels

Key specifications

VDS: 200V
ID: 2A
RDS(on): 0.70Ω

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

PowerIndustrial

Datasheet

342b7b89578108936dd10bbe5e56c961_2307191058_GOFORD-G7K2N20HE_C7465308.pdf

800 KB

CAD Models

Download ECAD models for G7K2N20HE: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET designed for power switching and DC/DC converter applications.