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G900P15M AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

G900P15M product

G900P15M

FETs

MOSFETP-ChannelPower

The G900P15M is a P-Channel power MOSFET designed for high-voltage switching and DC/DC conversion, featuring a -150V rating and -60A current capacity in a TO-263 package.

Best for

  • Power switching
  • DC/DC converters

Avoid if

  • Applications requiring N-Channel logic
  • Extremely space-constrained designs where TO-263 is too large

Check before use

  • Gate drive voltage compatibility
  • Thermal dissipation requirements

Key specifications

VDS
-150 V
ID
-60 A
RDS(ON)
< 80 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
REACH Unaffected
MSL
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power Management

Datasheet

6a9b7e4c5c98872a513aff9a2a646c37_2307191058_GOFORD-G900P15M_C7465311.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for G900P15M: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode power MOSFET utilizing advanced trench technology.