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GAN140-650FBEZ AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GAN140-650FBEZ product

GAN140-650FBEZ

MOSFETs - Single

GaNFET650VPower

The GAN140-650FBEZ is a 650V, 140mΩ GaN FET in a DFN5060-5 package, designed for high-efficiency power conversion applications.

Best for

  • High-frequency power conversion
  • Compact power supplies

Avoid if

  • Applications requiring traditional silicon MOSFET gate drive compatibility without adjustment

Check before use

  • Gate drive voltage levels
  • Thermal dissipation

Key specifications

VDS
650 V
RDSon
140 mΩ
ID
17 A

Compliance & Environment

RoHS
RoHS-compliant
REACH
REACH-compliant
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionMotor Drives

Datasheet

80a0c72e23445ba401193c019c59060b_2403281154_Nexperia-GAN140-650FBEZ_C20235669.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GAN140-650FBEZ: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V, 140mΩ Gallium Nitride (GaN) field-effect transistor (FET) in a surface-mount DFN5060-5 package.