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GBG65200NMAR AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GBG65200NMAR product

GBG65200NMAR

MOSFETs - Single

GaNPower Transistor650VHigh Efficiency

The GBG65200NMAR is a high-performance 650V GaN power transistor optimized for fast switching and high efficiency in power supply applications.

Best for

  • High-efficiency power supplies
  • Compact power adapters
  • Resonant converters

Avoid if

  • Applications requiring high gate threshold voltage
  • Designs where silicon MOSFETs are strictly required

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
650 V
RDS(on)
140 mΩ
ID
11 A

Compliance & Environment

RoHS
Compliant
REACH
nan
MSL
nan
ECCN
nan
HTSUS
nan

Application

Power ConversionIndustrial

Datasheet

a931d4b15b8bf09347a600988ff32211_2407111510_GOSEMICON-GBG65200NMAR_C28324645.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GBG65200NMAR: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an enhancement-mode, normally-off Gallium Nitride (GaN) power transistor rated for 650V, designed for high-frequency power conversion.