GBP65200GPMAR Datasheet, Specs, Alternatives & ECAD | GOSEMICON | PartGenie

AI summary

GBP65200GPMAR product

The GBP65200G is a 650V GaN power stage integrating a gate driver and HEMT, designed for high-efficiency, high-frequency power conversion.

Best for

High-frequency power supplies
Compact power conversion

Avoid if

Low-voltage applications where GaN benefits are not required

Check before use

Thermal management and PCB layout

Key specifications

VDS: 650 V
RDS(on): 150 mΩ
Switching Freq: 1 MHz

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power

Datasheet

d299d9eb4b891074c14b9929ab10023b_2407111421_GOSEMICON-GBP65200GPMAR_C28324644.pdf

800 KB

CAD Models

Download ECAD models for GBP65200GPMAR: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a monolithically integrated 650V GaN power stage featuring a gate driver and a 150 mΩ GaN HEMT, optimized for soft-switching topologies.