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GBS030R8TPMAR AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GBS030R8TPMAR product

GBS030R8TPMAR

MOSFETs - Single

MOSFETN-Channel30VPower

The GBS030R8TPMAR is a high-performance 30V N-channel SGT MOSFET in a PDFN5*6-8L package, optimized for low conduction losses in power management applications.

Best for

  • Battery Management Systems (BMS)
  • High-current motor drivers
  • Switching voltage regulators

Avoid if

  • Applications requiring high-voltage isolation beyond 30V.

Check before use

  • Thermal dissipation requirements for high-current operation.

Key specifications

VDS
30 V
RDS(on) (Typ)
0.85 mΩ
ID (Tc=25°C)
200 A

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery ManagementMotor Control

Datasheet

988be9e4082336a142f41b24521a1a78_2407111420_GOSEMICON-GBS030R8TPMAR_C28324648.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GBS030R8TPMAR: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel power MOSFET featuring a 30V breakdown voltage and ultra-low RDS(on) of 0.85mΩ, designed for high-efficiency power switching.