GBS032R4PMAR AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GBS032R4PMAR product

GBS032R4PMAR

MOSFETs - Single

N-Channel30VSGT MOSFETHigh Current

The GBS032R4PMAR is a high-performance 30V N-channel SGT MOSFET designed for efficient power conversion in compact applications.

Best for

  • High-efficiency DC-DC conversion
  • Compact motor drive circuits

Avoid if

  • Applications requiring VDS > 30V
  • Extremely low-cost, low-performance designs where SGT technology is overkill

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
30 V
ID
180 A
RDS(on) max
1.6 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionMotor Control

CAD Models

Download ECAD models for GBS032R4PMAR: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 30V N-channel SGT (Shielded Gate Trench) MOSFET optimized for high-efficiency power management, featuring ultra-low on-resistance.