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GBS65060TOA AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GBS65060TOA product

GBS65060TOA

MOSFETs - Single

MOSFETSuper Junction650VTO-220

The GBS65060TOA is a 650V N-channel Super Junction MOSFET designed for high-efficiency power conversion applications.

Best for

  • High-frequency resonant switch topologies
  • Power supply units

Avoid if

  • Low-voltage battery-powered applications where RDS(on) is critical

Check before use

  • Thermal resistance (RθJC) and heatsink requirements

Key specifications

VDS
650 V
RDS(on)
50 mΩ
ID
50 A
Qg
90 nC

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SupplyMotor Control

Datasheet

ef10265e25840d78543a2846326c7cb1_2306200940_GOSEMICON-GBS65060TOA_C7426972.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GBS65060TOA: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V N-channel Super Junction Power MOSFET featuring ultra-low RDS(on) and fast switching characteristics, housed in a TO-220 package.