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GC11N65M AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GC11N65M product

GC11N65M

MOSFETs - Single

MOSFETSuper-junction650VPower

The GC11N65M is a 650V, 11A N-Channel super-junction MOSFET in a TO-263 package, ideal for high-efficiency power supplies and industrial applications.

Best for

  • AC/DC power conversion
  • PFC circuits
  • Industrial power supplies

Avoid if

  • Applications requiring through-hole mounting
  • Low-voltage logic level switching

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDSS
650 V
ID
11 A
RDS(on)
< 360 mΩ
Package
TO-263

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power ConversionIndustrial

Datasheet

a0639d80607399e1cea4f47e9e583cee_products-detail.php.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GC11N65M: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The GC11N65M is an N-Channel super-junction power MOSFET from Goford Semiconductor, rated for 650V and 11A, designed for high-efficiency power conversion.