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GC180N65MF AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GC180N65MF product

GC180N65MF

MOSFETs - Single

MOSFETN-Channel650VPower Switch

The GC180N65MF is a 650V, 20A N-Channel enhancement mode power MOSFET utilizing advanced trench technology, housed in a TO-263 package.

Best for

  • Power switching
  • DC/DC converters

Avoid if

  • Applications requiring extremely low gate charge or ultra-low RDS(on) beyond this device's capabilities.

Check before use

  • Thermal resistance (RthJC) and junction temperature limits.

Key specifications

VDS
650V
ID
20A
RDS(on)
190mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SwitchingDC/DC Converters

Datasheet

c5cffcc8318375fc15405a80ae77a2ea_2312160131_GOFORD-GC180N65MF_C19673829.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GC180N65MF: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode power MOSFET designed for high-voltage power switching and DC/DC converter applications.