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GC2M0080120D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GC2M0080120D product

GC2M0080120D

MOSFETs - Single

SiC MOSFET1200VPower MOSFET

The GC2M0080120D is a 1200V SiC N-Channel MOSFET designed for high-efficiency power conversion applications.

Best for

  • Solar inverters
  • High-voltage DC/DC converters
  • Motor drives

Avoid if

  • Low-voltage applications where standard silicon MOSFETs are more cost-effective.

Check before use

  • Gate drive voltage levels and thermal resistance (RθJC = 0.65°C/W).

Key specifications

VDS
1200 V
ID
36 A
RDS(on)
80 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

b00043c68e007dd69dff8c0e448dcc00_2406191508_SUPSiC-GC2M0080120D_C7435046.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GC2M0080120D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a Silicon Carbide (SiC) N-Channel Enhancement Mode MOSFET rated for 1200V and 36A, optimized for high-speed switching and low on-resistance.