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GC2M1000170D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GC2M1000170D product

GC2M1000170D

MOSFETs - Single

SiC MOSFET1700VHigh VoltagePower Switching

The GC2M1000170D is a 1700V SiC MOSFET optimized for high-voltage power conversion, offering low switching losses and high thermal efficiency.

Best for

  • Auxiliary power supplies
  • High-voltage DC-DC converters

Avoid if

  • Low-voltage applications where standard Silicon MOSFETs are more cost-effective

Check before use

  • Gate driver compatibility with SiC voltage levels

Key specifications

VDS
1700 V
ID
5 A
RDS(on)
1.0 Ohm

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesIndustrial

Datasheet

0514b941ebf4cd093024cee3b3e8b02e_2406191511_SUPSiC-GC2M1000170D_C7435057.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GC2M1000170D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Silicon Carbide (SiC) power MOSFET with a 1700V breakdown voltage, designed for high-efficiency power switching.