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GC3M0015065D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GC3M0015065D product

GC3M0015065D

MOSFETs - Single

SiC MOSFET650VPower MOSFET

The GC3M0015065D is a 650V, 120A SiC MOSFET in a TO-247-3 package, optimized for high-efficiency power conversion.

Best for

  • EV charging
  • Solar inverters
  • High-frequency power supplies

Avoid if

  • Low-power or cost-sensitive applications where standard silicon MOSFETs suffice.

Check before use

  • Gate drive circuit compatibility with SiC requirements.

Key specifications

Vdss
650 V
Id
120 A
Rds(on)
15 mΩ

Compliance & Environment

RoHS
RoHS
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

418749813073bbd923c829debd0b24d8_2406191509_SUPSiC-GC3M0015065D_C7435023.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GC3M0015065D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Silicon Carbide (SiC) enhancement-mode power MOSFET designed for high-speed, high-efficiency switching applications.