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GC3M0016120D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GC3M0016120D product

GC3M0016120D

MOSFETs - Single

SiC MOSFET1200VPower Electronics

The GC3M0016120D is a high-performance 1200V SiC MOSFET designed for high-efficiency power conversion applications.

Best for

  • High-efficiency power conversion
  • Hard-switching PFC topologies

Avoid if

  • Low-voltage applications where Si MOSFETs are more cost-effective

Check before use

  • Gate drive voltage requirements
  • Thermal dissipation path

Key specifications

Vds
1200 V
Id
115 A
Rds(on)
16 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

970f886da85ba9225506aa9495b3dac4_2406191511_SUPSiC-GC3M0016120D_C7435039.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GC3M0016120D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode Silicon Carbide (SiC) Power MOSFET rated for 1200V and 115A.