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GC3M0032120D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GC3M0032120D product

GC3M0032120D

MOSFETs - Single

SiC MOSFET1200VPower Transistor

The GC3M0032120D is a 1200V, 63A SiC MOSFET in a TO-247-3 package, optimized for high-efficiency power conversion in industrial and automotive applications.

Best for

  • Solar inverters
  • EV motor drives
  • High-voltage DC/DC converters

Avoid if

  • Low-voltage applications where standard silicon MOSFETs are more cost-effective.

Check before use

  • Gate drive voltage levels and thermal dissipation requirements.

Key specifications

VDS
1200 V
ID
63 A
RDS(on)
32 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

d9c8c695fee8c6267b9d29cfa11b1794_2406191511_SUPSiC-GC3M0032120D_C7435042.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GC3M0032120D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Silicon Carbide (SiC) power MOSFET featuring a 1200V breakdown voltage and 32mΩ on-resistance, designed for high-efficiency switching.