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GC3M0040120D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GC3M0040120D product

GC3M0040120D

MOSFETs - Single

SiC MOSFET1200VPower Electronics

The GC3M0040120D is a 1200V, 66A SiC MOSFET in a TO-247-3 package, optimized for high-efficiency power conversion in industrial and automotive applications.

Best for

  • High-voltage power conversion
  • EV motor drives
  • Solar energy systems

Avoid if

  • Low-voltage, low-power applications where standard silicon MOSFETs are more cost-effective.

Check before use

  • Gate drive voltage levels
  • Thermal design
  • Switching frequency limits

Key specifications

VDS
1200 V
ID
66 A
RDS(on)
40 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

98c018caf179da0b77a9f067c06c9b28_2406191511_SUPSiC-GC3M0040120D_C7435043.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GC3M0040120D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Silicon Carbide (SiC) power MOSFET designed for high-voltage, high-efficiency switching applications.