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GC3M0060065K AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GC3M0060065K product

GC3M0060065K

MOSFETs - Single

SiC MOSFET650VPower MOSFET

The GC3M0060065K is a 650V, 37A N-Channel SiC MOSFET in a TO-247-4 package, designed for high-efficiency power conversion applications.

Best for

  • EV charging
  • Server power supplies
  • Solar inverters

Avoid if

  • Low-frequency, low-efficiency applications where standard silicon MOSFETs are sufficient and cheaper.

Check before use

  • Gate drive circuit compatibility with -4V/+15V requirements.

Key specifications

Vds
650 V
Id
37 A
Rds(on)
60 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

26ce82d2d634c28dbedcf8b59014d6e8_2406191509_SUPSiC-GC3M0060065K_C7435031.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GC3M0060065K: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a Silicon Carbide (SiC) N-Channel enhancement mode power MOSFET rated for 650V and 37A, optimized for high-efficiency, high-frequency power electronics.