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GC3M0065090D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GC3M0065090D product

GC3M0065090D

MOSFETs - Single

SiC MOSFET900VTO-247-3

The GC3M0065090D is a 900V SiC MOSFET optimized for high-efficiency power conversion.

Best for

  • EV chargers
  • Renewable energy inverters
  • High-voltage DC/DC converters

Avoid if

  • Low-voltage applications where standard silicon MOSFETs are more cost-effective.

Check before use

  • Gate drive voltage levels and thermal dissipation requirements.

Key specifications

VDS
900 V
ID
36 A
RDS(on)
65 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

6cc2ac411f3d29976c28e705690f6951_2406191509_SUPSiC-GC3M0065090D_C7435034.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GC3M0065090D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a Silicon Carbide (SiC) N-Channel Enhancement Mode MOSFET designed for high-voltage, high-efficiency power applications.