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GC3M0075120K AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GC3M0075120K product

GC3M0075120K

MOSFETs - Single

SiC MOSFET1200VPower Electronics

The GC3M0075120K is a 1200V, 32A SiC MOSFET in a TO-247-4 package, optimized for high-efficiency power conversion.

Best for

  • EV chargers
  • Renewable energy inverters
  • High-voltage DC/DC converters

Avoid if

  • Low-voltage applications where standard silicon MOSFETs are more cost-effective.

Check before use

  • Gate drive voltage levels and thermal design.

Key specifications

VDS
1200 V
ID
32 A
RDS(on)
75 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

f2d8f089d82230b948baaa50fc43dab5_2406191511_SUPSiC-GC3M0075120K_C7435055.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GC3M0075120K: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Silicon Carbide (SiC) Power MOSFET designed for high-voltage, high-efficiency switching applications.