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GC4D20120D AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GC4D20120D product

GC4D20120D

SiC Schottky Diodes

SiCSchottky1200VTO-247

The GC4D20120D is a 1200V SiC Schottky diode optimized for high-efficiency power conversion in SMPS and inverter applications.

Best for

  • Switch Mode Power Supplies
  • PFC stages
  • Inverter free-wheeling diodes

Avoid if

  • Low-voltage applications where standard silicon diodes are sufficient and more cost-effective.

Check before use

  • Thermal resistance calculations for your specific operating environment.

Key specifications

Reverse Voltage
1200 V
Forward Current
34 A
Forward Voltage
1.5 V

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

c85ce86c057945e2ec388aa1521bdf16_2406191513_SUPSiC-GC4D20120D_C7435099.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GC4D20120D: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200V Silicon Carbide (SiC) Schottky diode featuring zero reverse recovery current, designed for high-frequency switching.