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GC4D20120H AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GC4D20120H product

GC4D20120H

Diodes - Rectifiers - Single

SiC Diode1200VSchottky

The GC4D20120H is a 1200V, 26A SiC Schottky diode optimized for high-efficiency power conversion in high-frequency switching applications.

Best for

  • High-frequency power supplies
  • PFC stages
  • Inverter circuits

Avoid if

  • Low-voltage applications where standard silicon diodes are sufficient

Check before use

  • Thermal resistance and heat sink requirements

Key specifications

Reverse Voltage
1200 V
Forward Current
26 A
Capacitive Charge
99 nC

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial Inverters

Datasheet

6f3e12dc3e512754767402775513ac85_2406191513_SUPSiC-GC4D20120H_C7435089.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GC4D20120H: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200V Silicon Carbide (SiC) Schottky diode designed for high-efficiency power electronics, featuring zero reverse recovery current.