GC4D30120H Datasheet, Specs, Alternatives & ECAD | SUPSiC | PartGenie

AI summary

GC4D30120H product

The GC4D30120H is a 1200V, 30A Silicon Carbide (SiC) Schottky diode designed for high-efficiency power conversion applications.

Best for

PFC stages
Solar inverters
Industrial power supplies

Avoid if

Low-voltage applications where standard silicon diodes are sufficient

Check before use

Thermal dissipation requirements
Peak surge current ratings

Key specifications

Max Reverse Voltage: 1200 V
Continuous Forward Current: 30 A
Max Forward Voltage: 1.8 V

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ConversionIndustrial

Datasheet

f8ff25f3e0aa952f21065f79e3e0754d_2406191513_SUPSiC-GC4D30120H_C7435090.pdf

800 KB

CAD Models

Download ECAD models for GC4D30120H: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

Generate library

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage Silicon Carbide (SiC) Schottky diode capable of handling 1200V and 30A, optimized for high-frequency switching.