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GD10MPS12E AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GD10MPS12E product

GD10MPS12E

SiC Schottky Diodes

SiCSchottky1200V10A

The GD10MPS12E is a high-performance 1200V, 10A SiC Schottky diode optimized for high-frequency power conversion and efficiency.

Best for

  • High-efficiency power conversion
  • High-frequency switching

Avoid if

  • Low-voltage applications where standard silicon diodes suffice

Check before use

  • Thermal dissipation requirements
  • Surge current ratings

Key specifications

Reverse Voltage
1200 V
Forward Current
10 A
Operating Temp
175 °C

Compliance & Environment

RoHS
Compliant
REACH
Compliant
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

5c8de953e9b419e454ac01fe22323f73_2407160941_Navitas-GD10MPS12E_C27478402.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GD10MPS12E: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 1200V, 10A Silicon Carbide (SiC) Schottky MPS diode featuring Gen4 thin chip technology for improved efficiency and robustness.