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GKI04076-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

GKI04076-HXY product

GKI04076-HXY

FETs

N-ChannelMOSFET40VDFN5X6-8L

The GKI04076 is a 40V N-Channel MOSFET in a DFN5X6-8L package, optimized for battery protection and load switching.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • Applications requiring extremely high gate drive voltages beyond 20V
  • Environments exceeding 175°C junction temperature

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
40 V
ID
55 A
RDS(ON)
8.5 mΩ
Package
DFN5X6-8L

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery ProtectionLoad Switching

Datasheet

9d94f403ac1663668ecc3da234d4cd79_2405211553_HXY-MOSFET-GKI04076-HXY_C22366804.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for GKI04076-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The GKI04076 is an N-Channel enhancement mode MOSFET designed for high-efficiency switching applications, featuring low RDS(ON) and low gate charge.